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Influence of Chemical Copper Surface Treatments on the Mechanical Reliability and Failure Modes in Heterogeneous Integration Packages

NOV
13
2019
13. NOV 2019

Presentation Hall ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 3 - Power

10:05-10:30 h | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor

Subjects: SEMICON EUROPA

Type: Presentation

Speech: English

The reliability of Cu conductor lines is one of the major challenges in heterogeneous integration, where individually manufactured components are integrated into a single package to create highly functional devices. These conductors and their embedding in dielectric compounds are key elements to the functioning of packaging technologies such as fan out wafer level packaging (FOWLP). Shrinking the lines and spaces is central to achieving smaller form factors, reduced cost, higher performance and accommodating higher I/O counts.In order to withstand mechanical and thermal stresses during subsequent manufacturing steps and operation, Cu lines in redistribution layers (RDL) need to be mechanically resilient. With Cu line width approaching the 1 µm scale, the toughness and ductility of the metal itself become limited by size effects. Therefore not only the properties of the individual materials need to be optimized, but the whole system must act synergistically as a composite material. The synergistic effect of a composite material depends crucially upon the transmission of forces between its constituents, i.e. the adhesion between the different materials.We show that different chemical surface treatments can improve the mechanical reliability of the conductor/dielectric composite. Detailed analyses of the materials interfaces and the failure modes of the composites provide deep insight into the underlying mechanisms and lays the foundation for knowledge based design of improved materials systems.

Informations

Dr. Jan M. Knaup

Jan M. Knaup studied physics at the University of Paderborn and defended his PhD in theoretical physics in 2008. After post-doctoral studies at Harvard, the EPFL and the Bremen Center for Computational Materials Science, he joined the Atotech group in 2014. Since 2017 he is R&D manager of the Group R&D team at Atotech Berlin.

Dr. Jan M. Knaup
Manager R&D - Group R&D

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