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Presentation Hall B1 SEMICON EUROPA > TechARENA 1 & 2 - Technological Platform for Innovation > Smart Photonics
10:20-10:40 h | Hall B1 Tech Arena 1, Booth B1.175
Subjects: SEMICON EUROPA
Silicon is an attractive platform for correlated photon pairs sources that can be used for quantum cryptography and computing, while SiN On Insulator is promising for Kerr frequency comb source proposed in many nonlinear optics applications, such as on-chip spectroscopy, and terabit coherent communications. In both cases, high-Quality factor microresonators are required to get power-efficient nonlinear sources. The quality factor of the ring is directly correlated to the optical propagation losses caused by the material bulk or surface absorption, or scattering losses generated by roughness. In this work, we report on the fabrication and testing of Si and SiN microresonators with record values of quality factor.In sub-micrometric Si waveguides, scattering loss is the primary source of optical propagation losses. High temperature H annealing treatment was introduced in the fabrication process flow to minimize the Si sidewalls roughness at the atomic scale, enabling the fabrication of high intrinsic Q (>6 10) Si micro-resonators for on-chip heralded single photon quantum sources by spontaneous four-wave mixing. On the other hand, the absorption loss due to residual NH bonds in the SiN is the limiting factor for achieving low loss SiN waveguide. By introducing high temperature N annealing treatment in the process fabrication, we demonstrate critically coupled SiN resonators with intrinsic quality factors of > 610 using high-confinement waveguide dimensions (1.7-µm-wide, 820-nm-thick) with corresponding optical losses approaching 5 dB/m. The statistical study performed on 200mm wafer shows a variability of the optical results of 0.8% which proves the high reproducibility of the fabrication process. Using such high-quality factor devices, we report the possibility to generate Kerr frequency combs at sub-mW input powers coupled into the bus high-confinement waveguide.This work was supported by the the French National program IRT Nanoelec and the RENATECH network
Univ. grenoble Alpes, CNRS, LTM
is currently associate researcher at the “Laboratoire des Technologies de la Microélectronique” (LTM), a joint academic unit of the CNRS and Grenoble Alpes University in Grenoble, France. She received her M.S. in 2001 and Ph. D. in 2004in Material Sciences from the University of Grenoble-Alpes. After a year of research at the Chemical Engineering department of UC Berkeley in USA, she joined in 2006 the LTM/CNRS located on the CEA/LETI site of Grenoble. At LTM, she has the capability to conduct applied research in a professional environment allowing unique partnerships with key players of the Microelectronics industry. Her research focuses on the development and characterization of plasma etching processes involved in the elaboration of advanced devices for microelectronic, photonics and photovoltaics applications. The common objective of her research work is the development of damage free plasma etching processes. In particular, she worked on an important issue in plasma patterning, the pattern sidewalls roughness, that affects device performances whatever the targeted applications. She proposed methods to characterize it accurately and to minimize it. She has co-authored more than 70 papers in peer reviewed journals and has participated to about 30 invited talks at international conferences. In 2010, she was awarded the Bronze Medal of CNRS for her research achievements. She led the LTM etch team from 2008 to 2010. She is a regular reviewer of several international journals (JVST, Plasma process and polymer, Microelectronic engineering..). She is a committee member of the “Advanced Etch Technology for Nanopatterning” conference of the SPIE since 2012, of the Plasma Etch and Strip in Microelectronics (PESM) workshop since 2013 and of the Plasma Science Technology Division of the AVS Symposium since 2017.