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EU consortia joining forces to tackle challenges of advanced technology nodes

NOV
12
2019
12. NOV 2019

Presentation Halle B1 SEMICON EUROPA > Challenges of Moores Law > Challenges for Moore’s Law

13:25-13:50 Uhr | Halle B1 Tech Arena 1, Booth B1.175

Themen: SEMICON EUROPA

Format: Presentation

Sprache: Englisch

Moore’s Law has powered more than 50 years of advances in the microelectronics industry. In recent years this law is under pressure, because the continued geometrical miniaturization led to device performance degradation, device variability issues. Since 2015, with financial support from the EU, material compagnies, equipment companies, design houses, universities and research institutes have joined forces to tackle the challenges related to CMOS scaling. The first project, SeNaTe, targeted the 7nm node, subsequent projects respectively tackled the 5nm node (TAKE5 and TAKEMI5) and the 3nm node (TAPES3 and Pin3S) challenges. Recently, May 2019, the IT2 project targeting IC Technology for 2nm node was submitted for funding by EU. An overview will be presented of the technical solutions which have been explored to provide solutions for 7nm, 5nm, 3nm technology node to keep pace with Moore’s scaling law.The following topics will be addressed: multi-patternng solutions for area scaling, self-aligned patterning and area selective deposition solutions for Edge Placement Error (EPE) mitigation, material innovation, hybrid damascene and air gap integration for advanced BEOL, innovative device architectures transitioning from planar to FinFET, Gate All Around nanowire/nanosheet (GAA NW/NS) device, for improved device performance. Other topic which will be addressed are track height scaling and device booster integration through Design Technology Co-Optimization. Device boosters which will be covered comprise: fully-Self Aligned Contact, Self-Aligned Gate Contact, Self-Aligned Block, Buried Power Rail (BPR), Super Via (SV). Final part of the presentation will cover System Technology Co-Optimization (STCO). STCO, the next level of design and technology optimization, this time approached from a system/application perspective, for manufacturing of future node devices and applications meeting 2nn node PPAC specifications.

Informationen

Author,
Imec, APPM

PhD Werner Boullart

received a PhD in Chemistry in 1991 at the Catholic University of Leuven. Till 1995 he worked at the university as a researcher in the domain of atmospheric chemistry.In 1995, he joined imec as a process engineer responsible for the development of plasma etch processes. From 2001 till 2012, he was manager of the Plasma Etch group. Since 2012 he worked as staff engineer of the Unit Process and Module department responsible for strengthening the collaboration between the different unit process step groups. In this function he was also managing Joint Development Projects with key semiconductor equipment suppliers.Since 2015, he took up the role of work package project manager for imec in the EU funded projects. In this role he is also responsible for defining the the imec contribution for future projects related to advanced CMOS scaling.

PhD Werner Boullart
Principal Member of Technical Staff

Lageplan

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

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