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Temperature-dependent thermal properties of nm-thin Nb2O5 using a novel thermal impedance approach

NOV
13
2019
13. NOV 2019

Presentation Halle ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 4 - Future Outlook

12:30-12:55 Uhr | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor

Themen: SEMICON EUROPA

Format: Presentation

Sprache: Englisch

Nanosecond – and Picosecond laserflash equipment using aTime Domain Thermoreflectance method(TDTR) was used to investigate a 166 nm thick amorphous Niobium pentoxide layer (Nb2O5) on a silicon substrate at ambient temperatures from 25°C to 500°C.Thermal transients are obtained in sub-nanoseconds time resolution exploiting a pump laser technique. The thermal transients were analysed (i) using established analytical solutions of the fourier equation for the heat ransport in layered material stacks and (ii) by a novel numerical approach transferring thermal impedance (TI) –concepts into the nano- and pico second time regime. The analytical approach showed a thermal diffusivity and thermal conductivity from 0.43 mm²/s to 0.74 mm²/s and from 1.0 W/mK to 2.3 W/mK, respectively to temperature. The used numerical method eploited a thermal impedance appoach for the generation of structure functions to map the measured heat path in terms of a RthCth-network. The structure function showed a decrease of Rth with increasing temperature according to the increasing thermal conductivity of Nb2O5.The combination of both, the PicoTR and NanoTR, enables to investigate the complete heat path of Nb2O5 films, from ps to µs time regime. The numerical analysis, the structure function, visualizes the Nb2O5 temperature-dependent heat path. The structure function of the PicoTR measurements showed the heat path of the Pt layer, in the ps time regime, and the Nb2O5 film in ns time regime. The NanoTR structure function, displayed the heat path of the Nb2O5 and its substrate. The temperature dependency of the structure functions is in accordance with the analytical solutions of the thermal conductivity and exhibits the indirect proportionality between thermal conductivity of the analytical solutions.

Informationen

Dr. Stefan Defregger

received his master’s degree and PhD in Technical Physics from the Technical University of Graz, Austria. The PhD thesis was focused on piezosensor development in cooperation with AVL GmbH. Stefan has over 20 years’ experience in the semiconductor industry. In his current position at MCL he is a project manager and senior semiconductor technology expert with focus on semiconductor process technologies and materials for 3D/TSV and sensors. Previously Stefan has held assignments with the solar cell maker BlueChip Energy as Head of Engineering as well as with NXP as a test development manager for RFID. Earlier assignments include leading a Unit Process Engineering group (CVD, PVD, plasma etching, CMP, metrology) at ams AG (2001-2005) and Siemens (EPCOS-TDK) from 1990-2001 working on process development for ceramic discretes.

Dr. Stefan Defregger
Technology Programm Manager

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