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Presentation Halle ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 2 - Substrates
16:45-17:10 Uhr | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor
Themen: SEMICON EUROPA
Chairman: Douglas Guerrero (, Brewer Science)
High thermal conductivity, low reactivity, and appropriate unit cell size makes sapphire an ideal material for a wide range of electronic substrates such as LEDs and silicon on sapphire for CMOS. However, internal flaws, such as cracks, bubbles and dislocations, in sapphire substantially affect performance and reliability of such devices [1,2]. Flaws are usually identified only after costly wafering and polishing steps, because rough surface of raw crystals prevents detection of the defects. Most of manufacturers evaluate crystal defectiveness only at the wafer substrate stage, where up to 20% of processed material is rejected. This contribution shows advanced technology to visualise defects in semiconductor crystal, as well as defect statistics we have collected over 5 years of grading sapphire from key suppliers in Europe and Asia.With automated systems that can accurately determine locations, density and types of sapphire defects and ‘big data’ approach, we will illustrate trends in sapphire defectiveness, compare growth methods and derive the best combination of process parameters to increase yield. We will demonstrate:- 3D variation of defect morphology, size and quality zoning in a typical crystal grown by Kyropolous and HEM methods - Correlation of defects at crystal level with specific parameters of crystallisation- Revealing long-time trends in production quality by accumulating defect statistics over time- Applying and artificial intelligence to trace structural defects back to crystallisation issues. This work illustrates how approach in quality control can benefit both sapphire producers and end device manufacturers in terms of production yield.Anonymised dataHeat Exchange Method (HEM) T.Person, R.Howland. The Gleam of Well-Polished Sapphire, Solid State Technology, Jan 2013 O.Bunoiu et al. Gas bubbles in shaped sapphire. Progress in Crystal Growth and Characterisation of Materials 2010; 56(3–4),123
Dr. Ivan Orlovobtained PhD in Crystallography from Federal University of Technology in Switzerland and MSc in Solid-State Physics in Moscow, Russia. Ivan co-founded Scientific Visual in 2010 to answer the challenge of synthetic crystals industry struggling with high defect yield. Prior to it he worked in a company specialised in diamond optics. His career includes 10+ years of progressive experience in R&D with the focus on optical materials, industrial crystals and non-destructive quality control technologies. Dr. Orlov was SEMI Task Force member for sapphire standard development in China, and collaborates with ISO committee in Switzerland to establish industry-wide sapphire quality standard.