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Germanium as an emerging strategic material for next-generation devices and applications

NOV
12
2019
12. NOV 2019

Presentation Halle ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 2 - Substrates

16:20-16:45 Uhr | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor

Themen: SEMICON EUROPA

Chairman: Douglas Guerrero (, Brewer Science)

Format: Presentation

Sprache: Englisch

CMOS scaling is continuously being pushed to go beyond sub-10nm level. There is a quest to overcome the ultimate “bulk-Silicon(Si)” limits and the size-scaling by adding new materials and structures for devices. Among alternate new materials, Germanium (Ge) looks to be promising because of favourable properties like low effective electron mass, higher carrier mobilities for high-mobility channel material and p-MOSFET with simple material design and compatible processing in a Si-fab. Ge as substrate for solar cells in space and light emitting sources are well known and have already been demonstrated. From our vast experience in the growth of volume single crystalline boules of Si, Gallium Arsenide (GaAs), Indium Phosphide (InP), we have successfully grown Ge single crystals of size 2-inch diameter. Both high purity (net carrier concentration ≈ 10 cm) and high p-, n-doping (mid 10 cm) wafers with a EPD of 5000 cm for device applications in CMOS, detectors, plasmonics/sensors could be prepared out of the grown crystals. Additionally, the development of 3-inch dia crystalline boules are being completed and the wafers will be soon available. In this talk, the Ge growth technology and its related processes, developed in-house at IKZ, will be presented, after discussing the growth challenges of this new material. The remaining associated problems with Ge and envisaged solutions will be highlighted before concluding this presentation.

Informationen

PD Dr. R. Radhakrishnan Sumathi

Dr. R. Radhakrishnan Sumathi is a Vice-head of volume crystals department at Leibniz-Institute for Crystal Growth (IKZ), Berlin. She is leading and responsible for the semiconductor section, which focuses its niche research and development in elemental and compound semiconductor materials (Si, Ge, III-Vs, II-VIs). IKZ is a well-known institute within Europe for developing crystalline materials and also one of the world leading institute with a wealth of expertise covering narrow and wide bandgap materials, which includes nitrides (AlN), carbides (SiC), oxides (GaO), etc.Dr. Sumathi holds a Ph.D degree (Anna University, Chennai/Madras, India) and also obtained a “” title from Ludwig-Maximilians-University (LMU, Munich, Germany), where she is also a faculty at Materials Science and Crystallography institute. She has about 25 years of expertise and good experience in semiconductor materials and devices. She is very active in many professional societies of crystal growth / materials sciences and has received many awards, the recent one being, Young Achiever Award by Indian Science and Technology Association in 2018. She has over 75 papers in international journals and/or conferences and has given invited talks in 25 meetings.

PD Dr. R. Radhakrishnan Sumathi
Head Semiconductors

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