Kalender
Datum & Uhrzeit
Suchen
Datum
{{range.dates[index].day}}
{{range.dates[index].date}}
Uhrzeit
Vormittags Mittags Nachmittags Abends
  • von
  • bis
  • Uhr
Thema
Veranstaltungsort
Veranstaltung
Eigenschaften
{{item.name}}
{{item.name}}
Messegelände

(bitte wählen Sie die gewünschten Bereiche)

Vortragssprache
Format

Veranstaltungskalender 2019

Informationen zu Foren, Live-Demonstrationen, Accelerating Talents und Diskussionsrunden. In der Termindatenbank finden Sie auch das gesamte Forenprogramm.

Zurück zur Terminauswahl

New Prospects for Temperature and Current Sensing for Wide Bandgap Semiconductors

NOV
12
2019
12. NOV 2019

Presentation Halle ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 2 - Substrates

15:55-16:20 Uhr | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor

Themen: SEMICON EUROPA

Chairman: Douglas Guerrero (, Brewer Science)

Format: Presentation

Sprache: Englisch

In typical high voltage applications, such as traction inverters, silicon IGBTs or SiC MOSFETs are implemented. Within such applications the power semiconductors are accompanied by current and temperature sensing devices to drive a certain load, e.g. an electric motor. Commonly, these sensing elements must be added to the system but there are various approaches to utilize appropriate current or temperature sensitive parameters of the semiconductor device.To promote future power electronic applications it is essential to tap the full potential of the power semiconductor device, especially with regard to current and temperature sensing. Power electronic applications could benefit from a commonly unappreciated and unused advantage: Light emission. It occurs in every forward biased p-n junction and exhibits an approximately proportional intensity-current characteristic. This behavior is known from operation of usual light emitting diodes and it is also applicable to p-n junctions in power semiconductor devices.The basic suitability of electroluminescence from power semiconductor devices for the purpose of current sensing or deadtime control is demonstrated in the authors' previous work [1,2]. The current work of the authors focus on the transient measurement of the light emission from SiC Power MOSFETs for the purpose of current sensing [3] and for the purpose of junction temperature sensing.[1] Winkler et al., “Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing”, PCIM Europe 2018, 2018[2] Winkler et al., “Electroluminescence in Power Electronic Applications: Utilization of p-n Junctions in Power Semiconductors as unintentional Light Emitting Diodes for Current and Temperature Sensing”, EVS31 & EVTeC 2018, 2018[3] Winkler et al., “Study on Transient Light Emission of SiC Power MOSFETs Regarding the Sensing of Source-Drain Currents in Hard-Switched Power Electronic Applications”. PCIM Europe 2019, 2019

Informationen

Jonathan Winkler

Jonathan Winkler received the Bachelor of Engineering degree in mechatronics & electrical engineering from University of Applied Science Esslingen in 2014. He continued his studies at the Robert Bosch Center for Power Electronics and received the Master of Science degree in power- & microelectronics from Reutlingen University in 2016. Afterwards, he joined a PhD program of Robert Bosch GmbH and the University of Stuttgart. The focus of his research is on the electroluminescence of power semiconductor devices and its utilization.

Jonathan Winkler

Lageplan

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

Weitere Veranstaltungen