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Presentation Halle ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 2 - Substrates
15:55-16:20 Uhr | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor
Themen: SEMICON EUROPA
Chairman: Douglas Guerrero (, Brewer Science)
In typical high voltage applications, such as traction inverters, silicon IGBTs or SiC MOSFETs are implemented. Within such applications the power semiconductors are accompanied by current and temperature sensing devices to drive a certain load, e.g. an electric motor. Commonly, these sensing elements must be added to the system but there are various approaches to utilize appropriate current or temperature sensitive parameters of the semiconductor device.To promote future power electronic applications it is essential to tap the full potential of the power semiconductor device, especially with regard to current and temperature sensing. Power electronic applications could benefit from a commonly unappreciated and unused advantage: Light emission. It occurs in every forward biased p-n junction and exhibits an approximately proportional intensity-current characteristic. This behavior is known from operation of usual light emitting diodes and it is also applicable to p-n junctions in power semiconductor devices.The basic suitability of electroluminescence from power semiconductor devices for the purpose of current sensing or deadtime control is demonstrated in the authors' previous work [1,2]. The current work of the authors focus on the transient measurement of the light emission from SiC Power MOSFETs for the purpose of current sensing  and for the purpose of junction temperature sensing. Winkler et al., “Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing”, PCIM Europe 2018, 2018 Winkler et al., “Electroluminescence in Power Electronic Applications: Utilization of p-n Junctions in Power Semiconductors as unintentional Light Emitting Diodes for Current and Temperature Sensing”, EVS31 & EVTeC 2018, 2018 Winkler et al., “Study on Transient Light Emission of SiC Power MOSFETs Regarding the Sensing of Source-Drain Currents in Hard-Switched Power Electronic Applications”. PCIM Europe 2019, 2019
Robert Bosch GmbH
Jonathan Winkler received the Bachelor of Engineering degree in mechatronics & electrical engineering from University of Applied Science Esslingen in 2014. He continued his studies at the Robert Bosch Center for Power Electronics and received the Master of Science degree in power- & microelectronics from Reutlingen University in 2016. Afterwards, he joined a PhD program of Robert Bosch GmbH and the University of Stuttgart. The focus of his research is on the electroluminescence of power semiconductor devices and its utilization.