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SiGeSn – A new (old) building block for nano- and optoelectronic devices

NOV
12
2019
12. NOV 2019

Presentation Halle ICM - Internationales Congress Center München SEMICON EUROPA > Strategic Materials Conference > Session 2 - Substrates

15:30-15:55 Uhr | ICM - Internationales Congress Center München ICM Room 13a, 1st Floor

Themen: SEMICON EUROPA

Chairman: Douglas Guerrero (, Brewer Science)

Format: Presentation

Sprache: Englisch

Recent years have seen a lot of experimental effort directed towards integrating photonics with electronics. The Group-IV elements Si and Ge are the dominating materials of semiconductor electronics. However, their application to optoelectronics is limited due to their indirect bandgap and the concomitant low efficiency in optoelectronic applications. Recent experiments have therefore focused on the investigation of GeSn and SiGeSn alloys that could potentially be used as direct bandgap Group-IV-materials for an efficient on-chip integration of photonics and electronics. The relaxed alloy Ge(1-y)Sn(y) has been predicted to become a direct bandgap material for y > 0.073, while pseudomorphic Ge(1-y)Sn(y) is predicted to have a direct bandgap for y > 0.19. A number of experimental studies have been performed to fabricate and characterize Ge(1-y)Sn(y) bulk and quantum well photodetector devices. Because of the large lattice mismatch between Ge and Sn (14 %), the growth of Ge(1-y)Sn(y) alloys with a large percentage of Sn is difficult to achieve on Si and Ge substrates. The ternary alloy SiGeSn allows one to decouple bandgap and lattice constant [8] and is, therefore, a particularly interesting candidate for optoelectronic applications. Several groups have reported the successful fabrication of SiGeSn alloys by Chemical Vapor Deposition and Molecular Beam Epitaxy; bulk SiGeSn-photodiodes have been fabricated and analyzed. Furthermore, a number of proposals concerning photonic devices such as light-emitting diodes or modulators with Multi-Quantum-Well structures in their active regions have been made. For those devices, additional advantages such as a lower intensity of Auger processes have been predicted. The talk presents results on the growth and characterization of SiGeSn alloys integrated on Si substrates and their use in optoelectronic devices.

Informationen

Prof. Dr. Jörg Schulze

Jörg Schulze studied experimental physics at the TU of Braunschweig, Germany. In 2000 he received his PhD in Electrical Engineering from the Electrical Engineering & Information Technology Faculty of the University of the German Federal Armed Forces Munich with a dissertation on Boron surface phases and Esaki-like tunneling transistors. From the same faculty he received in 2004 his post-doctoral degree (Habilitation) in Semiconductor Physics and Microelectronics. He was active as Senior Consultant for Technical Risk Management and as Head of Competence Field “Robust Design Optimization” in Siemens Corporate Technology (2005-2008). Since 2008 he has been working at the University of Stuttgart, Germany, as Professor of Electrical Engineering and Head of the Institute of Semiconductor Engineering. He authored more than 200 peer reviewed articles, two book chapters and two books.

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